MJD41C(MS) Datasheet & Equivalents

NPN TO-252 (DPAK) General Purpose MSKSEMI
VCEO
100V
Ic Max
9A
Pd Max
1.25W
hFE Gain
75

Quick Reference

The MJD41C(MS) is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by MSKSEMI. It supports a breakdown voltage of 100V and continuous collector current of 9A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)9AMax current handling
Power Dissipation (Pd)1.25WMax thermal limit
DC Current Gain (hFE)75Base signal amplification ratio
Transition Frequency (fT)3MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD41C NPN TO-252 (DPAK) 100V 9A 30 1.25W
BTC1510F3L-TN3-R NPN TO-252 (DPAK) 150V 10A 20 1.1W