MJ11032 Transistor Datasheet & Specifications

NPN BJT | SPTECH

NPNTO-3General Purpose
VCEO
120V
Ic Max
50A
Pd Max
300W
Gain
18000

Quick Reference

The MJ11032 is a NPN bipolar transistor in a TO-3 package. This datasheet provides complete specifications including 120V breakdown voltage and 50A continuous collector current. Download the MJ11032 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
VCEO120VBreakdown voltage
IC Max50ACollector current
Pd Max300WPower dissipation
Gain18000DC current gain
Frequency-Transition speed
VCEsat3.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55โ„ƒ~+200โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJ15015GNPNTO-3120V15A180W
BDY58NPNTO-3125V25A175W
2N5631NPNTO-3140V16A200W
BD317NPNTO-3100V16A200W
2SC1116NPNTO-3120V10A100W
2N6338NPNTO-3100V25A200W
2N5038NPNTO-390V20A140W
MJ11030NPNTO-390V50A300W
MJ15015NPNTO-3120V15A180W
3DD303CNPNTO-3100V3A30W