MJ11030 Transistor Datasheet & Specifications

NPN BJT | SPTECH

NPNTO-3General Purpose
VCEO
90V
Ic Max
50A
Pd Max
300W
Gain
18000

Quick Reference

The MJ11030 is a NPN bipolar transistor in a TO-3 package. This datasheet provides complete specifications including 90V breakdown voltage and 50A continuous collector current. Download the MJ11030 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
VCEO90VBreakdown voltage
IC Max50ACollector current
Pd Max300WPower dissipation
Gain18000DC current gain
Frequency-Transition speed
VCEsat3.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55โ„ƒ~+200โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BD317NPNTO-3100V16A200W
2SD750NPNTO-380V15A100W
2SC1777NPNTO-370V6A50W
2N5886NPNTO-380V25A200W
2N6338NPNTO-3100V25A200W
2N5038NPNTO-390V20A140W
3DD303CNPNTO-3100V3A30W
2SC681NPNTO-370V6A50W
MJ3001NPNTO-380V10A150W