BDY58 Transistor Datasheet & Specifications
NPNTO-3General Purpose
VCEO
125V
Ic Max
25A
Pd Max
175W
Gain
60
Quick Reference
The BDY58 is a NPN bipolar transistor in a TO-3 package. This datasheet provides complete specifications including 125V breakdown voltage and 25A continuous collector current. Download the BDY58 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| VCEO | 125V | Breakdown voltage |
| IC Max | 25A | Collector current |
| Pd Max | 175W | Power dissipation |
| Gain | 60 | DC current gain |
| Frequency | 10MHz | Transition speed |
| VCEsat | 1.4V | Saturation voltage |
| Vebo | 10V | Emitter-Base voltage |
| Temp | - | Operating temp |