LBSS123LT1G MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level LRC
Vds Max
100V
Id Max
170mA
Rds(on)
6Ω@10V
Vgs(th)
2V

Quick Reference

The LBSS123LT1G is an N-Channel MOSFET in a SOT-23 package, manufactured by LRC. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 170mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)170mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
On-Resistance (Rds(on))6Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)20pFInternal gate capacitance
Output Capacitance (Coss)9pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
5N10-MS N-Channel SOT-23 100V 5A 90mΩ@10V 1.5V
MSKSEMI 📄 PDF
NCE0102 N-Channel SOT-23 100V 2A 240mΩ@10V 2.5V
SI2328A N-Channel SOT-23 100V 1.5A 245mΩ@10V
265mΩ@4.5V
2V;4V
DO3N10B N-Channel SOT-23 100V 3A 280mΩ@10V 2.5V
DOINGTER 📄 PDF
BSS123-6AF N-Channel SOT-23 100V 200mA 3.5Ω@4.5V 2.5V
FOSAN 📄 PDF
BSS123 N-Channel SOT-23 100V 170mA 6Ω@10V
10Ω@4.5V
1.4V