BSS123 MOSFET Datasheet & Specifications (R+O, SOT-23)
N-Channel
SOT-23
Logic-Level
R+O
Vds Max
100V
Id Max
170mA
Rds(on)
6Ω@10V;10Ω@4.5V
Vgs(th)
1.4V
Quick Reference
The BSS123 is an N-Channel MOSFET in a SOT-23 package, manufactured by R+O. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 170mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 170mA | Max current handling |
| Power Dissipation (Pd) | 680mW | Max thermal limit |
| On-Resistance (Rds(on)) | 6Ω@10V;10Ω@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.4V | Voltage required to turn on |
| Gate Charge (Qg) | 1.4nC@10V | Switching energy |
| Input Capacitance (Ciss) | 22pF | Internal gate capacitance |
| Output Capacitance (Coss) | 3.5pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |