LBC856BWT1G Datasheet & Equivalents
PNP
SOT-323
General Purpose
LRC
VCEO
65V
Ic Max
100mA
Pd Max
150mW
hFE Gain
220
Quick Reference
The LBC856BWT1G is a PNP bipolar junction transistor in a SOT-323 package, manufactured by LRC. It supports a breakdown voltage of 65V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 65V | Max breakdown voltage |
| Collector Current (Ic) | 100mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| DC Current Gain (hFE) | 220 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 650mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 15nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BC856BW | PNP | SOT-323 | 65V | 100mA | 220 | 200mW | YANGJIE 📄 PDF |
| BC856AW-7-F | PNP | SOT-323 | 65V | 100mA | 250 | 200mW | DIODES 📄 PDF |
| BC856W | PNP | SOT-323 | 65V | 100mA | 125 | 200mW | Nexperia 📄 PDF |
| 115 | PNP | SOT-323 | 65V | 100mA | 125 | 350mW | DIODES 📄 PDF |
| BC856BW | PNP | SOT-323 | 65V | 100mA | 475 | 200mW | Nexperia 📄 PDF |
| BC856BW | PNP | SOT-323 | 120V | 100mA | 200 | 100mW | TOSHIBA 📄 PDF |