2SA1587-GR,LF Datasheet & Equivalents
PNP
SOT-323
General Purpose
TOSHIBA
VCEO
120V
Ic Max
100mA
Pd Max
100mW
hFE Gain
200
Quick Reference
The 2SA1587-GR,LF is a PNP bipolar junction transistor in a SOT-323 package, manufactured by TOSHIBA. It supports a breakdown voltage of 120V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 120V | Max breakdown voltage |
| Collector Current (Ic) | 100mA | Max current handling |
| Power Dissipation (Pd) | 100mW | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 300mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+125℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMSTA92-7-F | PNP | SOT-323 | 300V | 100mA | 25 | 200mW | DIODES 📄 PDF |