BC856AW-7-F Datasheet & Equivalents
PNP
SOT-323
General Purpose
DIODES
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
250
Quick Reference
The BC856AW-7-F is a PNP bipolar junction transistor in a SOT-323 package, manufactured by DIODES. It supports a breakdown voltage of 65V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 65V | Max breakdown voltage |
| Collector Current (Ic) | 100mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| DC Current Gain (hFE) | 250 | Base signal amplification ratio |
| Transition Frequency (fT) | 200MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 75mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 4uA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| LBC856BWT1G | PNP | SOT-323 | 65V | 100mA | 220 | 150mW | LRC 📄 PDF |
| BC856BW | PNP | SOT-323 | 65V | 100mA | 220 | 200mW | YANGJIE 📄 PDF |
| BC856W | PNP | SOT-323 | 65V | 100mA | 125 | 200mW | Nexperia 📄 PDF |
| 115 | PNP | SOT-323 | 65V | 100mA | 125 | 350mW | DIODES 📄 PDF |
| BC856BW | PNP | SOT-323 | 65V | 100mA | 475 | 200mW | Nexperia 📄 PDF |
| BC856BW | PNP | SOT-323 | 120V | 100mA | 200 | 100mW | TOSHIBA 📄 PDF |