KSD1691YSTU Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-126General Purpose
VCEO
60V
Ic Max
5A
Pd Max
1.3W
Gain
60

Quick Reference

The KSD1691YSTU is a NPN bipolar transistor in a TO-126 package. This datasheet provides complete specifications including 60V breakdown voltage and 5A continuous collector current. Download the KSD1691YSTU datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-126Physical mounting
VCEO60VBreakdown voltage
IC Max5ACollector current
Pd Max1.3WPower dissipation
Gain60DC current gain
Frequency-Transition speed
VCEsat300mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BD13516STU-HXYNPNTO-12645V1.5A1W
BD137G-HYXNPNTO-12660V1.5A1W
BD235NPNTO-12660V2A1W
BD136NPNTO-12645V1.5A1W
BD437NPNTO-12645V4A36W
BD135-16NPNTO-12645V1.5A1.25W
BD13716STU-HXYNPNTO-12660V1.5A1W
BD437NPNTO-12645V4A36W