BD136 Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
45V
Ic Max
1.5A
Pd Max
1W
Gain
300

Quick Reference

The BD136 is a NPN bipolar transistor in a TO-126 package. This datasheet provides complete specifications including 45V breakdown voltage and 1.5A continuous collector current. Download the BD136 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
VCEO45VBreakdown voltage
IC Max1.5ACollector current
Pd Max1WPower dissipation
Gain300DC current gain
Frequency50MHzTransition speed
VCEsat500mV@1.5A,0.15ASaturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BD13516STU-HXYNPNTO-12645V1.5A1W
BD437NPNTO-12645V4A36W
BD135-16NPNTO-12645V1.5A1.25W
BD437NPNTO-12645V4A36W