BD13516STU-HXY Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
45V
Ic Max
1.5A
Pd Max
1W
Gain
250

Quick Reference

The BD13516STU-HXY is a NPN bipolar transistor in a TO-126 package. This datasheet provides complete specifications including 45V breakdown voltage and 1.5A continuous collector current. Download the BD13516STU-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
VCEO45VBreakdown voltage
IC Max1.5ACollector current
Pd Max1WPower dissipation
Gain250DC current gain
Frequency50MHzTransition speed
VCEsat500mV@1.5A,0.15ASaturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BD136NPNTO-12645V1.5A1W
BD437NPNTO-12645V4A36W
BD135-16NPNTO-12645V1.5A1.25W
BD437NPNTO-12645V4A36W