IXFN70N60Q2 MOSFET Datasheet & Specifications

N-Channel SOT-227B High-Voltage Littelfuse/IXYS
Vds Max
600V
Id Max
70A
Rds(on)
88mΩ@10V
Vgs(th)
5.5V

Quick Reference

The IXFN70N60Q2 is an N-Channel MOSFET in a SOT-227B package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 70A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLittelfuse/IXYSOriginal Manufacturer
PackageSOT-227BPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)70AMax current handling
Power Dissipation (Pd)890WMax thermal limit
On-Resistance (Rds(on))88mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5.5VVoltage required to turn on
Gate Charge (Qg)265nC@10VSwitching energy
Input Capacitance (Ciss)1.34nFInternal gate capacitance
Output Capacitance (Coss)345pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IXFN150N65X2 N-Channel SOT-227B 650V 145A 17mΩ@10V 5V
Littelfuse/IXYS 📄 PDF
IXFN90N85X N-Channel SOT-227B 850V 90A 41mΩ@10V 5.5V
Littelfuse/IXYS 📄 PDF