IXFN150N65X2 MOSFET Datasheet & Specifications

N-Channel SOT-227B High-Voltage Littelfuse/IXYS
Vds Max
650V
Id Max
145A
Rds(on)
17mΩ@10V
Vgs(th)
5V

Quick Reference

The IXFN150N65X2 is an N-Channel MOSFET in a SOT-227B package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 145A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLittelfuse/IXYSOriginal Manufacturer
PackageSOT-227BPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)145AMax current handling
Power Dissipation (Pd)1.04kWMax thermal limit
On-Resistance (Rds(on))17mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)355nC@10VSwitching energy
Input Capacitance (Ciss)21nFInternal gate capacitance
Output Capacitance (Coss)12.5nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.