IXFN90N85X MOSFET Datasheet & Specifications

N-Channel SOT-227B High-Voltage Littelfuse/IXYS
Vds Max
850V
Id Max
90A
Rds(on)
41mΩ@10V
Vgs(th)
5.5V

Quick Reference

The IXFN90N85X is an N-Channel MOSFET in a SOT-227B package, manufactured by Littelfuse/IXYS. It supports a drain-source breakdown voltage of 850V and a continuous drain current of 90A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerLittelfuse/IXYSOriginal Manufacturer
PackageSOT-227BPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)850VMax breakdown voltage
Continuous Drain Current (Id)90AMax current handling
Power Dissipation (Pd)1.2kWMax thermal limit
On-Resistance (Rds(on))41mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5.5VVoltage required to turn on
Gate Charge (Qg)340nC@10VSwitching energy
Input Capacitance (Ciss)13.3nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.