IPD78CN10N G-VB MOSFET Datasheet & Specifications
N-Channel
TO-252
Standard Power
VBsemi Elec
Vds Max
100V
Id Max
12A
Rds(on)
55mΩ@10V;57mΩ@4.5V
Vgs(th)
3.5V
Quick Reference
The IPD78CN10N G-VB is an N-Channel MOSFET in a TO-252 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 12A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 12A | Max current handling |
| Power Dissipation (Pd) | 8.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 55mΩ@10V;57mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 21nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | 180pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| NSH045N100S | N-Channel | TO-252 | 100V | 120A | 4.5mΩ@10V | 3V | NH 📄 PDF |
| YFW120N10AD | N-Channel | TO-252 | 100V | 120A | 4.6mΩ@10V | 3V | YFW 📄 PDF |
| SP010N04BGTH | N-Channel | TO-252 | 100V | 120A | 5mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| IPD068N10N3G(UMW) | N-Channel | TO-252 | 100V | 90A | 5.7mΩ@10V | 2.7V | UMW 📄 PDF |
| MDDG10R08D | N-Channel | TO-252 | 100V | 75A | 6.5mΩ@10V | 2V | MDD(Microdiod... 📄 PDF |
| HB10N085SG | N-Channel | TO-252 | 100V | 80A | 6.7mΩ@10V | 1.7V | R+O 📄 PDF |
| CMD060N10 | N-Channel | TO-252 | 100V | 80A | 7mΩ@10V | 4V | Cmos 📄 PDF |
| PGD10N100 | N-Channel | TO-252 | 100V | 65A | 7.8mΩ@10V | 2V | HT(Shenzhen J... 📄 PDF |
| AGMH065N10D | N-Channel | TO-252 | 100V | 100A | 8mΩ@10V | 4V | AGMSEMI 📄 PDF |
| OSD100N10G | N-Channel | TO-252 | 100V | 100A | 8mΩ@10V | 2.5V | OSEN 📄 PDF |
| WSF50N10G | N-Channel | TO-252 | 100V | 40A | 13.8mΩ@10V | 2.5V | Winsok Semicon 📄 PDF |
| HB10N200S | N-Channel | TO-252 | 100V | 45A | 14mΩ@10V | 1.6V | R+O 📄 PDF |
| 50N10 | N-Channel | TO-252 | 100V | 50A | 14mΩ@10V | 2.2V | GOODWORK 📄 PDF |
| SDM017G10DB | N-Channel | TO-252 | 100V | 40A | 17mΩ@10V | 1.9V | SINEDEVICE 📄 PDF |
| PJD50N10AL-AU_L2_000A1 | N-Channel | TO-252 | 100V | 42A | 20mΩ@10V 22mΩ@4.5V |
1.8V | PANJIT 📄 PDF |
| IRFR540ZTRPBF-TP | N-Channel | TO-252 | 100V | 50A | 22.5mΩ@10V | 4V | TECH PUBLIC 📄 PDF |
| AOD4126 | N-Channel | TO-252 | 100V | 50A | 27.5mΩ@4.5V | 4V | TECH PUBLIC 📄 PDF |
| IRFR3410TRPBF(ES) | N-Channel | TO-252 | 100V | 18A | 37mΩ@10V | 1.5V | ElecSuper 📄 PDF |
| IRLR3410TRPBF-JSM | N-Channel | TO-252 | 100V | 20A | 37mΩ@10V 39mΩ@4.5V |
1.5V | JSMSEMI 📄 PDF |
| H15N10D | N-Channel | TO-252 | 100V | 15A | 75mΩ@10V | 2V | Huixin 📄 PDF |