HYG015N03LS2C2 MOSFET Datasheet & Specifications
N-Channel
PDFN5x6-8L
Logic-Level
HUAYI
Vds Max
30V
Id Max
140A
Rds(on)
3mΩ@4.5V
Vgs(th)
3V
Quick Reference
The HYG015N03LS2C2 is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 140A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | PDFN5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 140A | Max current handling |
| Power Dissipation (Pd) | 65W | Max thermal limit |
| On-Resistance (Rds(on)) | 3mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 44.7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.011nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SDM07AG03K | N-Channel | PDFN5x6-8L | 30V | 327A | 0.55mΩ@10V | 2.5V | SINEDEVICE 📄 PDF |
| HYG007N03LS1C2 | N-Channel | PDFN5x6-8L | 30V | 220A | 1.2mΩ@4.5V | 2.4V | HUAYI 📄 PDF |
| GBS032R4PMAR | N-Channel | PDFN5x6-8L | 30V | 180A | 2.5mΩ@4.5V | 1.9V | GOSEMICON 📄 PDF |
| HYG009N04LS1C2 | N-Channel | PDFN5x6-8L | 40V | 200A | 1.4mΩ@4.5V | 3V | HUAYI 📄 PDF |
| HYG015N04LS1C2 | N-Channel | PDFN5x6-8L | 40V | 150A | 2.4mΩ@4.5V | 2.5V | HUAYI 📄 PDF |
| FH3406GS | N-Channel | PDFN5x6-8L | 60V | 140A | 2.1mΩ@10V | 1V | XIN FEI HONG 📄 PDF |