HYG007N03LS1C2 MOSFET Datasheet & Specifications
N-Channel
PDFN5x6-8L
Logic-Level
HUAYI
Vds Max
30V
Id Max
220A
Rds(on)
1.2mΩ@4.5V
Vgs(th)
2.4V
Quick Reference
The HYG007N03LS1C2 is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 220A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | PDFN5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 220A | Max current handling |
| Power Dissipation (Pd) | 75W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.2mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.4V | Voltage required to turn on |
| Gate Charge (Qg) | 104nC@10V | Switching energy |
| Input Capacitance (Ciss) | 7.072nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SDM07AG03K | N-Channel | PDFN5x6-8L | 30V | 327A | 0.55mΩ@10V | 2.5V | SINEDEVICE 📄 PDF |