HYG015N04LS1C2 MOSFET Datasheet & Specifications
N-Channel
PDFN5x6-8L
Logic-Level
HUAYI
Vds Max
40V
Id Max
150A
Rds(on)
2.4mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The HYG015N04LS1C2 is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 150A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HUAYI | Original Manufacturer |
| Package | PDFN5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 150A | Max current handling |
| Power Dissipation (Pd) | 75W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.4mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 59nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.05nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HYG009N04LS1C2 | N-Channel | PDFN5x6-8L | 40V | 200A | 1.4mΩ@4.5V | 3V | HUAYI 📄 PDF |