HXY4612S MOSFET Datasheet & Specifications

P-Channel SOP-8 Logic-Level HXY MOSFET
Vds Max
60V
Id Max
5A
Rds(on)
140mΩ@10V
Vgs(th)
2.5V

Quick Reference

The HXY4612S is an P-Channel MOSFET in a SOP-8 package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)5AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))140mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)19nC@4.5VSwitching energy
Input Capacitance (Ciss)1.137nFInternal gate capacitance
Output Capacitance (Coss)76pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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