HP806P550S MOSFET Datasheet & Specifications
P-Channel
SOP-8
Logic-Level
R+O
Vds Max
60V
Id Max
8A
Rds(on)
27mΩ@10V;34mΩ@4.5V
Vgs(th)
1.7V
Quick Reference
The HP806P550S is an P-Channel MOSFET in a SOP-8 package, manufactured by R+O. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8A | Max current handling |
| Power Dissipation (Pd) | 3.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 27mΩ@10V;34mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.7V | Voltage required to turn on |
| Gate Charge (Qg) | 58.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.05nF | Internal gate capacitance |
| Output Capacitance (Coss) | 169pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |