NCE603S MOSFET Datasheet & Specifications

P-Channel SOP-8 Logic-Level NCE
Vds Max
60V
Id Max
6.3A
Rds(on)
30mΩ@10V
Vgs(th)
2.5V

Quick Reference

The NCE603S is an P-Channel MOSFET in a SOP-8 package, manufactured by NCE. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 6.3A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNCEOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)6.3AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))30mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)25nC@10VSwitching energy
Input Capacitance (Ciss)500pFInternal gate capacitance
Output Capacitance (Coss)60pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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STP6621 P-Channel SOP-8 60V 18A 23mΩ@10V
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HP806P550S P-Channel SOP-8 60V 8A 27mΩ@10V
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AO4421-GK P-Channel SOP-8 60V 7A 30mΩ@10V 2.5V
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WSP6067A P-Channel SOP-8 60V 7A 100mΩ@10V 3V
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