HP803N100S MOSFET Datasheet & Specifications

N-Channel SOP-8 Logic-Level R+O
Vds Max
30V
Id Max
15A
Rds(on)
6mΩ@10V
Vgs(th)
1.7V

Quick Reference

The HP803N100S is an N-Channel MOSFET in a SOP-8 package, manufactured by R+O. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 15A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)15AMax current handling
Power Dissipation (Pd)2.1WMax thermal limit
On-Resistance (Rds(on))6mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.7VVoltage required to turn on
Gate Charge (Qg)30.3nC@10VSwitching energy
Input Capacitance (Ciss)1.497nFInternal gate capacitance
Output Capacitance (Coss)210pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TPHR6503PL N-Channel SOP-8 30V 150A 0.65mΩ@10V 2.1V
TOSHIBA 📄 PDF
L1Q N-Channel SOP-8 30V 393A 0.89mΩ@4.5V 2.1V
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TPHR6503PL N-Channel SOP-8 30V 25A 3.2mΩ@10V
4mΩ@4.5V
1.7V
L1Q(M N-Channel SOP-8 30V 18A 4.5mΩ@10V
6mΩ@4.5V
1.7V
HP803N045S N-Channel SOP-8 30V 16A 4.7mΩ@10V 2V
HP803N110S N-Channel SOP-8 30V 17.2A 6.8mΩ@4.5V 2.2V
IRF7456TR(UMW) N-Channel SOP-8 40V 15A 13mΩ@10V 1.6V
TECH PUBLIC 📄 PDF
IRF8113TR(UMW) N-Channel SOP-8 40V 20A 22.6mΩ@4.5V 2V
XNRUSEMI 📄 PDF
IRF7471TRPBF-TP N-Channel SOP-8 60V 15A 8mΩ@10V 2V
Winsok Semicon 📄 PDF
XR4884B N-Channel SOP-8 100V 59A 7.4mΩ@10V 2V
TOSHIBA 📄 PDF