HP803N110S MOSFET Datasheet & Specifications
N-Channel
SOP-8
Logic-Level
R+O
Vds Max
30V
Id Max
18A
Rds(on)
4.5mΩ@10V;6mΩ@4.5V
Vgs(th)
1.7V
Quick Reference
The HP803N110S is an N-Channel MOSFET in a SOP-8 package, manufactured by R+O. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 18A | Max current handling |
| Power Dissipation (Pd) | 3.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 4.5mΩ@10V;6mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.7V | Voltage required to turn on |
| Gate Charge (Qg) | 41.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.987nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TPHR6503PL | N-Channel | SOP-8 | 30V | 150A | 0.65mΩ@10V | 2.1V | TOSHIBA 📄 PDF |
| L1Q | N-Channel | SOP-8 | 30V | 393A | 0.89mΩ@4.5V | 2.1V | TOSHIBA 📄 PDF |
| TPHR6503PL | N-Channel | SOP-8 | 30V | 25A | 3.2mΩ@10V 4mΩ@4.5V |
1.7V | R+O 📄 PDF |
| L1Q(M | N-Channel | SOP-8 | 40V | 20A | 22.6mΩ@4.5V | 2V | XNRUSEMI 📄 PDF |
| HP803N045S | N-Channel | SOP-8 | 100V | 59A | 7.4mΩ@10V | 2V | TOSHIBA 📄 PDF |