TPHR6503PL,L1Q MOSFET Datasheet & Specifications

N-Channel SOP-8 Logic-Level TOSHIBA
Vds Max
30V
Id Max
150A
Rds(on)
0.65mΩ@10V
Vgs(th)
2.1V

Quick Reference

The TPHR6503PL,L1Q is an N-Channel MOSFET in a SOP-8 package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)960mW;170WMax thermal limit
On-Resistance (Rds(on))0.65mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.1VVoltage required to turn on
Gate Charge (Qg)110nC@10VSwitching energy
Input Capacitance (Ciss)10nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TPHR6503PL N-Channel SOP-8 30V 393A 0.89mΩ@4.5V 2.1V
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