HC3M0045065K1 MOSFET Datasheet & Specifications
N-Channel
TO-247-4L
Logic-Level
HXY MOSFET
Vds Max
650V
Id Max
49A
Rds(on)
33mΩ@20V
Vgs(th)
2V
Quick Reference
The HC3M0045065K1 is an N-Channel MOSFET in a TO-247-4L package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 49A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-247-4L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 49A | Max current handling |
| Power Dissipation (Pd) | 242W | Max thermal limit |
| On-Resistance (Rds(on)) | 33mΩ@20V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 96nC | Switching energy |
| Input Capacitance (Ciss) | 1.823nF | Internal gate capacitance |
| Output Capacitance (Coss) | 190pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP80N120CTK | N-Channel | TO-247-4L | 1.2kV | 120A | 13mΩ@18V | 2.5V | Siliup 📄 PDF |
| CI60N120SM4 | N-Channel | TO-247-4L | 1.2kV | 60A | 45mΩ@20V | 2.5V | Tokmas 📄 PDF |