FCX593TA Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
100V
Ic Max
1A
Pd Max
2W
hFE Gain
100
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Quick Reference

The FCX593TA is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 100V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
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PNP Bipolar Transistors High-Power PNP BJTs SOT-89 PNP BJTs