2SA1416S-TD-E Datasheet & Equivalents

PNP SOT-89 General Purpose onsemi
VCEO
100V
Ic Max
1A
Pd Max
500mW
hFE Gain
100

Quick Reference

The 2SA1416S-TD-E is a PNP bipolar junction transistor in a SOT-89 package, manufactured by onsemi. It supports a breakdown voltage of 100V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)120MHzMax operating frequency
Saturation Voltage (VCEsat)100mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FCX593TA PNP SOT-89 100V 1A 100 2W
ZXTP4003ZTA PNP SOT-89 100V 1A 100 1.5W
BCX53-16-AU_R1_000A1 PNP SOT-89 100V 1A 250 1.4W
2SA1417-S PNP SOT-89 100V 2A 400 550mW
2SA1013(RANGE:160-320) PNP SOT-89 160V 1A 160 500mW
2SA1013-JSM PNP SOT-89 160V 1A 320 500mW
2SA1013Y PNP SOT-89 160V 1A 320 500mW
2SA1013Y-2AF PNP SOT-89 160V 1A 320 500mW
A1013Y-2AF PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
YONGYUTAI ๐Ÿ“„ PDF
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
FUXINSEMI ๐Ÿ“„ PDF