DXT5551-13-HXY Datasheet & Equivalents

NPN SOT-89 General Purpose HXY MOSFET
VCEO
160V
Ic Max
600mA
Pd Max
500mW
hFE Gain
300

Quick Reference

The DXT5551-13-HXY is a NPN bipolar junction transistor in a SOT-89 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)160VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
CXT5551-JSM NPN SOT-89 160V 600mA 300 500mW
HCXT5551 NPN SOT-89 160V 600mA 300 500mW
HXY MOSFET ๐Ÿ“„ PDF
PXT5551 NPN SOT-89 160V 600mA 300 500mW
HT(Shenzhen J... ๐Ÿ“„ PDF
2N5551G-B-AB3-R NPN SOT-89 160V 600mA 150 500mW
CXT5551 NPN SOT-89 160V 600mA 120 500mW
CXT5551(RANGE:120-180) NPN SOT-89 160V 600mA 120 500mW
DXT5551-13 NPN SOT-89 160V 600mA 80 1.2W
2SC2383-JSM NPN SOT-89 160V 1A 320 500mW
2SC2383Y NPN SOT-89 160V 1A 320 500mW
C2383Y-2AF NPN SOT-89 160V 1A 320 500mW
2SC2383 NPN SOT-89 160V 1A 320 500mW
2SC2383(RANGE:160-320) NPN SOT-89 160V 1A 320 500mW
FUXINSEMI ๐Ÿ“„ PDF
2SC2383(RANGE:160-320) NPN SOT-89 160V 1A 160 500mW
2SC2383 NPN SOT-89 160V 1A 100 500mW
HXY MOSFET ๐Ÿ“„ PDF
2SC2383 NPN SOT-89 160V 1A 100 500mW
GOODWORK ๐Ÿ“„ PDF
2SD2211T100R NPN SOT-89 160V 1.5A 120 2W
2SD669AG-C-AB3-R NPN SOT-89 160V 1.5A 100 500mW