DXT5551-13 Datasheet & Equivalents

NPN SOT-89 General Purpose DIODES
VCEO
160V
Ic Max
600mA
Pd Max
1.2W
hFE Gain
80

Quick Reference

The DXT5551-13 is a NPN bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)160VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)1.2WMax thermal limit
DC Current Gain (hFE)80Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
CXT5551 NPN SOT-89 160V 600mA 120 500mW
CXT5551(RANGE:120-180) NPN SOT-89 160V 600mA 120 500mW
2N5551G-B-AB3-R NPN SOT-89 160V 600mA 150 500mW
CXT5551-JSM NPN SOT-89 160V 600mA 300 500mW
DXT5551-13-HXY NPN SOT-89 160V 600mA 300 500mW
HXY MOSFET ๐Ÿ“„ PDF
HCXT5551 NPN SOT-89 160V 600mA 300 500mW
HXY MOSFET ๐Ÿ“„ PDF
PXT5551 NPN SOT-89 160V 600mA 300 500mW
HT(Shenzhen J... ๐Ÿ“„ PDF
2SC2383 NPN SOT-89 160V 1A 100 500mW
HXY MOSFET ๐Ÿ“„ PDF
2SC2383 NPN SOT-89 160V 1A 100 500mW
GOODWORK ๐Ÿ“„ PDF
2SC2383(RANGE:160-320) NPN SOT-89 160V 1A 160 500mW
2SC2383-JSM NPN SOT-89 160V 1A 320 500mW
2SC2383Y NPN SOT-89 160V 1A 320 500mW
C2383Y-2AF NPN SOT-89 160V 1A 320 500mW
2SC2383 NPN SOT-89 160V 1A 320 500mW
2SC2383(RANGE:160-320) NPN SOT-89 160V 1A 320 500mW
FUXINSEMI ๐Ÿ“„ PDF
2SD669AG-C-AB3-R NPN SOT-89 160V 1.5A 100 500mW
2SD2211T100R NPN SOT-89 160V 1.5A 120 2W