2SD2211T100R Datasheet & Equivalents
NPN
SOT-89
General Purpose
ROHM
VCEO
160V
Ic Max
1.5A
Pd Max
2W
hFE Gain
120
Quick Reference
The 2SD2211T100R is a NPN bipolar junction transistor in a SOT-89 package, manufactured by ROHM. It supports a breakdown voltage of 160V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| DC Current Gain (hFE) | 120 | Base signal amplification ratio |
| Transition Frequency (fT) | 80MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1.2V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 50uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2SD669AG-C-AB3-R | NPN | SOT-89 | 160V | 1.5A | 100 | 500mW | UTC 📄 PDF |