DMC2710UDWQ-13 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel SOT-363 Logic-Level DIODES
Vds Max
20V
Id Max
750mA
Rds(on)
750mΩ@4.5V
Vgs(th)
1V

Quick Reference

The DMC2710UDWQ-13 is a Dual N/P-Channel in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 750mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)750mAMax current handling
Power Dissipation (Pd)380mWMax thermal limit
On-Resistance (Rds(on))750mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)600pC@4.5V;700pC@4.5VSwitching energy
Input Capacitance (Ciss)42pF;49pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SI2429DW-TP Dual N/P-Channel SOT-363 20V 1.5A 260mΩ@1.8V 1.1V
PJT7600_R1_00001 Dual N/P-Channel SOT-363 20V 1A 325mΩ@4.5V 1V
PANJIT 📄 PDF
SI3439KDWA-TP Dual N/P-Channel SOT-363 20V 750mA 700mΩ@1.8V 1.1V
DMG1016UDW-7 Dual N/P-Channel SOT-363 20V 1.066A 750mΩ@4.5V 1V
DIODES 📄 PDF
DMC2710UDW-13 Dual N/P-Channel SOT-363 20V 750mA 1.05Ω@2.5V 1V
DIODES 📄 PDF
BSD235CH6327 Dual N/P-Channel SOT-363 20V 950mA 1.2Ω@4.5V 1.2V
Infineon 📄 PDF
DMC3401LDW-13 Dual N/P-Channel SOT-363 30V;30V 800mA;550mA 400mΩ@10V
900mΩ@10V
1.2V;2.2V
DIODES 📄 PDF
DMC3401LDW-7 Dual N/P-Channel SOT-363 30V;30V 800mA;550mA 400mΩ@10V
900mΩ@10V
1.2V;2.2V
DIODES 📄 PDF