BSS123 MOSFET Datasheet & Specifications (TECH PUBLIC, SOT-23)

N-Channel SOT-23 Logic-Level TECH PUBLIC
Vds Max
100V
Id Max
170mA
Rds(on)
10Ī©@4.5V
Vgs(th)
2.8V
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Quick Reference

The BSS123 is an N-Channel MOSFET in a SOT-23 package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 170mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)170mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
On-Resistance (Rds(on))10Ī©@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.8VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)43pFInternal gate capacitance
Output Capacitance (Coss)15pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
5N10-MS N-Channel SOT-23 100V 5A 90mĪ©@10V 1.5V
MSKSEMI šŸ“„ PDF
SI2392ADS-T1-GE3 N-Channel SOT-23 100V 3.1A 126mĪ©@10V 3V
VISHAY šŸ“„ PDF
AP10TN135N N-Channel SOT-23 100V 2.1A 135mĪ©@10V 3V
APEC šŸ“„ PDF
NCE0102 N-Channel SOT-23 100V 2A 240mĪ©@10V 2.5V
NCE šŸ“„ PDF
SI2328A N-Channel SOT-23 100V 1.5A 245mĪ©@10V
265mĪ©@4.5V		 2V;4V
UMW šŸ“„ PDF
SI2324DS-T1-GE3 N-Channel SOT-23 100V 2.3A 278mĪ©@4.5V 2.8V
VISHAY šŸ“„ PDF
DO3N10B N-Channel SOT-23 100V 3A 280mĪ©@10V 2.5V
DOINGTER šŸ“„ PDF
AS2324 N-Channel SOT-23 100V 2A 310mĪ©@4.5V 3V
AnBon šŸ“„ PDF
BSS123-6AF N-Channel SOT-23 100V 200mA 3.5Ī©@4.5V 2.5V
FOSAN šŸ“„ PDF
LBSS123LT1G N-Channel SOT-23 100V 170mA 6Ī©@10V 2V
LRC šŸ“„ PDF
FTZ15N35G N-Channel SOT-23 350V 200mA 15Ī©@10V 3V
ARK micro šŸ“„ PDF
Logic-Level N-Channel SOT-23 N-Channel