BSS123 MOSFET Datasheet & Specifications (JSCJ, SOT-23)

N-Channel SOT-23 Logic-Level JSCJ
Vds Max
100V
Id Max
170mA
Rds(on)
6Ω@10V
Vgs(th)
2.8V

Quick Reference

The BSS123 is an N-Channel MOSFET in a SOT-23 package, manufactured by JSCJ. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 170mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)170mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
On-Resistance (Rds(on))6Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.8VVoltage required to turn on
Gate Charge (Qg)1.4nCSwitching energy
Input Capacitance (Ciss)29pFInternal gate capacitance
Output Capacitance (Coss)15pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
5N10-MS N-Channel SOT-23 100V 5A 90mΩ@10V 1.5V
MSKSEMI 📄 PDF
SI2392ADS-T1-GE3 N-Channel SOT-23 100V 3.1A 126mΩ@10V 3V
VISHAY 📄 PDF
AP10TN135N N-Channel SOT-23 100V 2.1A 135mΩ@10V 3V
NCE0102 N-Channel SOT-23 100V 2A 240mΩ@10V 2.5V
SI2328A N-Channel SOT-23 100V 1.5A 245mΩ@10V
265mΩ@4.5V
2V;4V
SI2324DS-T1-GE3 N-Channel SOT-23 100V 2.3A 278mΩ@4.5V 2.8V
VISHAY 📄 PDF
DO3N10B N-Channel SOT-23 100V 3A 280mΩ@10V 2.5V
DOINGTER 📄 PDF
AS2324 N-Channel SOT-23 100V 2A 310mΩ@4.5V 3V
AnBon 📄 PDF
BSS123-6AF N-Channel SOT-23 100V 200mA 3.5Ω@4.5V 2.5V
FOSAN 📄 PDF
LBSS123LT1G N-Channel SOT-23 100V 170mA 6Ω@10V 2V
FTZ15N35G N-Channel SOT-23 350V 200mA 15Ω@10V 3V
ARK micro 📄 PDF