BSP296NH6327 MOSFET Datasheet & Specifications
N-Channel
SOT-223
Logic-Level
Infineon
Vds Max
100V
Id Max
1.2A
Rds(on)
800mΩ@4.5V
Vgs(th)
1.8V
Quick Reference
The BSP296NH6327 is an N-Channel MOSFET in a SOT-223 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 1.2A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.2A | Max current handling |
| Power Dissipation (Pd) | 1.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 800mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.8V | Voltage required to turn on |
| Gate Charge (Qg) | 6.7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 152.7pF | Internal gate capacitance |
| Output Capacitance (Coss) | 26.3pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HT10N2H8S | N-Channel | SOT-223 | 100V | 3A | 140mΩ@10V | 1.5V | R+O 📄 PDF |
| FQT7N10LTF | N-Channel | SOT-223 | 100V | 1.7A | 380mΩ@5V | 2V | onsemi 📄 PDF |
| IRLL110TRPBF | N-Channel | SOT-223 | 100V | 1.5A | 760mΩ@4V | 2V | VISHAY 📄 PDF |
| PTH150N04 | N-Channel | SOT-223 | 150V | 4A | 160mΩ@10V | 2V | HT(Shenzhen J... 📄 PDF |