IRLL110TRPBF MOSFET Datasheet & Specifications

N-Channel SOT-223 Logic-Level VISHAY
Vds Max
100V
Id Max
1.5A
Rds(on)
760mΩ@4V
Vgs(th)
2V

Quick Reference

The IRLL110TRPBF is an N-Channel MOSFET in a SOT-223 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 1.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)1.5AMax current handling
Power Dissipation (Pd)3.1WMax thermal limit
On-Resistance (Rds(on))760mΩ@4VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)6.1nC@5VSwitching energy
Input Capacitance (Ciss)250pFInternal gate capacitance
Output Capacitance (Coss)80pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HT10N2H8S N-Channel SOT-223 100V 3A 140mΩ@10V 1.5V
FQT7N10LTF N-Channel SOT-223 100V 1.7A 380mΩ@5V 2V
onsemi 📄 PDF
PTH150N04 N-Channel SOT-223 150V 4A 160mΩ@10V 2V
HT(Shenzhen J... 📄 PDF