FQT7N10LTF MOSFET Datasheet & Specifications
N-Channel
SOT-223
Logic-Level
onsemi
Vds Max
100V
Id Max
1.7A
Rds(on)
380mΩ@5V
Vgs(th)
2V
Quick Reference
The FQT7N10LTF is an N-Channel MOSFET in a SOT-223 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 1.7A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.7A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 380mΩ@5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 290pF | Internal gate capacitance |
| Output Capacitance (Coss) | 72pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |