BFN27E6327HTSA1 Datasheet & Equivalents

PNP SOT-23 General Purpose Infineon
VCEO
300V
Ic Max
200mA
Pd Max
360mW
hFE Gain
25

Quick Reference

The BFN27E6327HTSA1 is a PNP bipolar junction transistor in a SOT-23 package, manufactured by Infineon. It supports a breakdown voltage of 300V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)300VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)360mWMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current20uALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FMMTA92QTA PNP SOT-23 300V 200mA 40 350mW
FMMTA92TA PNP SOT-23 300V 200mA 40 310mW
MMBTA92(RANGE:100-200) PNP SOT-23 300V 200mA 60 300mW
FMMT597TA PNP SOT-23 300V 200mA 100 500mW
MMBTA92 PNP SOT-23 300V 200mA 100 300mW
MMBTA92 PNP SOT-23 300V 200mA 100 300mW
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MMBTA92 PNP SOT-23 300V 200mA 100 300mW
MMBTA92-6AF PNP SOT-23 300V 200mA 200 300mW
MMBTA92-MS PNP SOT-23 300V 200mA 200 300mW
MMBTA92 PNP SOT-23 300V 200mA 200 300mW
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MMBTA92 PNP SOT-23 300V 200mA 200 300mW
MMBTA92 PNP SOT-23 300V 200mA 200 300mW
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MMBTA92-TP PNP SOT-23 300V 300mA 100 300mW
MMBTA92 2D PNP SOT-23 300V 300mA 300 300mW
LMBTA92LT1G PNP SOT-23 300V 500mA 25 225mW
MMBTA92LT1G PNP SOT-23 300V 500mA 25 225mW
MMBTA92 PNP SOT-23 300V 500mA 25 350mW
MMBTA92-7-F PNP SOT-23 300V 500mA 40 300mW
MMBTA92Q-7-F PNP SOT-23 300V 500mA 40 300mW
MMBTA92 PNP SOT-23 300V 500mA 60 350mW