MMBTA92 Datasheet & Equivalents
PNP
SOT-23
General Purpose
R+O
VCEO
300V
Ic Max
500mA
Pd Max
350mW
hFE Gain
60
Quick Reference
The MMBTA92 is a PNP bipolar junction transistor in a SOT-23 package, manufactured by R+O. It supports a breakdown voltage of 300V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 300V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 350mW | Max thermal limit |
| DC Current Gain (hFE) | 60 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMBTA92-7-F | PNP | SOT-23 | 300V | 500mA | 40 | 300mW | DIODES 📄 PDF |
| MMBTA92Q-7-F | PNP | SOT-23 | 300V | 500mA | 40 | 300mW | DIODES 📄 PDF |
| LMBTA92LT1G | PNP | SOT-23 | 300V | 500mA | 25 | 225mW | LRC 📄 PDF |
| MMBTA92LT1G | PNP | SOT-23 | 300V | 500mA | 25 | 225mW | onsemi 📄 PDF |
| DP350T05-7 | PNP | SOT-23 | 350V | 500mA | 30 | 300mW | DIODES 📄 PDF |
| STR2550 | PNP | SOT-23 | 500V | 500mA | 100 | 500mW | ST 📄 PDF |