MMBTA92-7-F Datasheet & Equivalents

PNP SOT-23 General Purpose DIODES
VCEO
300V
Ic Max
500mA
Pd Max
300mW
hFE Gain
40

Quick Reference

The MMBTA92-7-F is a PNP bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 300V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)300VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)40Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current250nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTA92Q-7-F PNP SOT-23 300V 500mA 40 300mW
LMBTA92LT1G PNP SOT-23 300V 500mA 25 225mW
MMBTA92LT1G PNP SOT-23 300V 500mA 25 225mW
MMBTA92 PNP SOT-23 300V 500mA 25 350mW
MMBTA92 PNP SOT-23 300V 500mA 60 350mW
MMBTA92 PNP SOT-23 300V 500mA 80 300mW
DP350T05-7 PNP SOT-23 350V 500mA 30 300mW
STR2550 PNP SOT-23 500V 500mA 100 500mW