BD13516STU-HXY Datasheet & Equivalents

NPN TO-126 General Purpose HXY MOSFET
VCEO
45V
Ic Max
1.5A
Pd Max
1W
hFE Gain
250
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Quick Reference

The BD13516STU-HXY is a NPN bipolar junction transistor in a TO-126 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 45V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)45VMax breakdown voltage
Collector Current (Ic)1.5AMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)250Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)500mV@1.5A,0.15AVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BD136 NPN TO-126 45V 1.5A 300 1W
HXY MOSFET 📄 PDF
BD135-16 NPN TO-126 45V 1.5A 40 1.25W
ST 📄 PDF
BD13716STU-HXY NPN TO-126 60V 1.5A 250 1W
HXY MOSFET 📄 PDF
BD137G-HYX NPN TO-126 60V 1.5A 25 1W
HXY MOSFET 📄 PDF
BD235 NPN TO-126 60V 2A - 1W
HXY MOSFET 📄 PDF
BD13916STU-HXY NPN TO-126 80V 1.5A 250 1W
HXY MOSFET 📄 PDF
BD140 NPN TO-126 80V 1.5A 200 1W
HXY MOSFET 📄 PDF
BD139-16 NPN TO-126 80V 1.5A 160 12.5W
YFW 📄 PDF
BD139 NPN TO-126 80V 1.5A 63 12.5W
ST 📄 PDF
MJE182 NPN TO-126 80V 3A 250 12.5W
GOODWORK 📄 PDF
NPN Bipolar Transistors High-Power NPN BJTs TO-126 NPN BJTs