BD137G-HYX Datasheet & Equivalents

NPN TO-126 General Purpose HXY MOSFET
VCEO
60V
Ic Max
1.5A
Pd Max
1W
hFE Gain
25

Quick Reference

The BD137G-HYX is a NPN bipolar junction transistor in a TO-126 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 60V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)1.5AMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)500mV@1.5A,0.15AVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BD13716STU-HXY NPN TO-126 60V 1.5A 250 1W
HXY MOSFET ๐Ÿ“„ PDF
BD235 NPN TO-126 60V 2A - 1W
HXY MOSFET ๐Ÿ“„ PDF
BD139 NPN TO-126 80V 1.5A 63 12.5W
BD139-16 NPN TO-126 80V 1.5A 160 12.5W
BD140 NPN TO-126 80V 1.5A 200 1W
HXY MOSFET ๐Ÿ“„ PDF
BD13916STU-HXY NPN TO-126 80V 1.5A 250 1W
HXY MOSFET ๐Ÿ“„ PDF
MJE182 NPN TO-126 80V 3A 250 12.5W
GOODWORK ๐Ÿ“„ PDF