BD140 Datasheet & Equivalents
NPN
TO-126
General Purpose
HXY MOSFET
VCEO
80V
Ic Max
1.5A
Pd Max
1W
hFE Gain
200
Quick Reference
The BD140 is a NPN bipolar junction transistor in a TO-126 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 80V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-126 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 80V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV@1.5A,0.15A | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BD139-16 | NPN | TO-126 | 80V | 1.5A | 160 | 12.5W | YFW 📄 PDF |
| BD13916STU-HXY | NPN | TO-126 | 80V | 1.5A | 250 | 1W | HXY MOSFET 📄 PDF |
| BD139 | NPN | TO-126 | 80V | 1.5A | 63 | 12.5W | ST 📄 PDF |
| MJE182 | NPN | TO-126 | 80V | 3A | 250 | 12.5W | GOODWORK 📄 PDF |
| TTC004B | NPN | TO-126 | 160V | 1.5A | 140 | 1.5W | TOSHIBA 📄 PDF |