BCP5510TA Datasheet & Equivalents

NPN SOT-223 General Purpose DIODES
VCEO
60V
Ic Max
1A
Pd Max
2W
hFE Gain
10

Quick Reference

The BCP5510TA is a NPN bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)10Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BCP5516TA NPN SOT-223 60V 1A 10 2W
BCP55TA NPN SOT-223 60V 1A 10 2W
BCP55-16 NPN SOT-223 60V 1A 25 1.5W
BCP55-16 NPN SOT-223 60V 1A 100 1.5W
BCP55-16 NPN SOT-223 60V 1A 100 1.5W
TECH PUBLIC ๐Ÿ“„ PDF
BCP55 NPN SOT-223 60V 1A 250 1.5W
HXY MOSFET ๐Ÿ“„ PDF
BCP55-16-MS NPN SOT-223 60V 1A 250 1.5W
BCP55-JSM NPN SOT-223 60V 1A 250 1.5W
BCP55-16 NPN SOT-223 60V 1A 250 1.5W
PZT651T1G NPN SOT-223 60V 2A 75 800mW
FZT692BTA NPN SOT-223 70V 2A 500 3W
BCP5416TA NPN SOT-223 80V 1A 10 2W
BCP5616TA NPN SOT-223 80V 1A 10 2W
BCP56TA NPN SOT-223 80V 1A 10 2W
BCP5616QTC NPN SOT-223 80V 1A 25 2W
BCP56-16 NPN SOT-223 80V 1A 25 1.33W
BCP56 NPN SOT-223 80V 1A 63 1.35W
Nexperia ๐Ÿ“„ PDF
115 NPN SOT-223 80V 1A 63 1.5W
BCP56-10(RANGE:63-160) NPN SOT-223 80V 1A 63 725mW
Nexperia ๐Ÿ“„ PDF
BCP56-10HX NPN SOT-223 80V 1A 63 1.5W