BCP55-16 Datasheet & Equivalents

NPN SOT-223 General Purpose R+O
VCEO
60V
Ic Max
1A
Pd Max
1.5W
hFE Gain
25

Quick Reference

The BCP55-16 is a NPN bipolar junction transistor in a SOT-223 package, manufactured by R+O. It supports a breakdown voltage of 60V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)130MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BCP5510TA NPN SOT-223 60V 1A 10 2W
BCP5516TA NPN SOT-223 60V 1A 10 2W
BCP55TA NPN SOT-223 60V 1A 10 2W
BCP55 NPN SOT-223 60V 1A 250 1.5W
HXY MOSFET ๐Ÿ“„ PDF
BCP55-16-MS NPN SOT-223 60V 1A 250 1.5W
BCP55-JSM NPN SOT-223 60V 1A 250 1.5W
PZT651T1G NPN SOT-223 60V 2A 75 800mW
FZT692BTA NPN SOT-223 70V 2A 500 3W
BCP5616QTC NPN SOT-223 80V 1A 25 2W
BCP56-16 NPN SOT-223 80V 1A 25 1.33W
BCP5416TA NPN SOT-223 80V 1A 10 2W
BCP5616TA NPN SOT-223 80V 1A 10 2W
BCP56TA NPN SOT-223 80V 1A 10 2W
BCP56 NPN SOT-223 80V 1A 63 1.35W
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115 NPN SOT-223 80V 1A 63 1.5W
BCP56-10(RANGE:63-160) NPN SOT-223 80V 1A 63 725mW
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BCP56-10HX NPN SOT-223 80V 1A 63 1.5W
BCP56-10T1G NPN SOT-223 80V 1A 63 1.35W
Nexperia ๐Ÿ“„ PDF
BCP56-16 NPN SOT-223 80V 1A 63 1.5W
115 NPN SOT-223 80V 1A 100 1.5W