ZXTP5401GTA Transistor Datasheet & Specifications
PNP
SOT-223
General Purpose
DIODES
VCEO
150V
Ic Max
600mA
Pd Max
2W
hFE Gain
50
Quick Reference
The ZXTP5401GTA is a PNP bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the ZXTP5401GTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 2W | Power dissipation |
| DC Current Gain | 50 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |