WT955 Transistor Datasheet & Specifications
PNP
SOT-223
High Power
Wayon
VCEO
170V
Ic Max
4A
Pd Max
3W
hFE Gain
-
Quick Reference
The WT955 is a PNP bipolar transistor in a SOT-223 package by Wayon. This datasheet provides complete specifications including 170V breakdown voltage and 4A continuous collector current. Download the WT955 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Wayon | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 170V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | 8V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |