ZXTP2012GTA Transistor Datasheet & Specifications
PNP
SOT-223
High Power
DIODES
VCEO
60V
Ic Max
5.5A
Pd Max
3W
hFE Gain
45
Quick Reference
The ZXTP2012GTA is a PNP bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 5.5A continuous collector current. Download the ZXTP2012GTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 5.5A | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | 45 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 195mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 500nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZX5T951GTA | PNP | SOT-223 | 60V | 5.5A | 3W |
| DSS60600MZ4-13 | PNP | SOT-223 | 60V | 6A | 2W |
| ZX5T1951GTA | PNP | SOT-223 | 60V | 6A | 3W |
| NSS60600MZ4T1G | PNP | SOT-223 | 60V | 6A | 2W |
| NSV60600MZ4T3G | PNP | SOT-223 | 60V | 6A | 2W |
| ZX5T951GQTC | PNP | SOT-223 | 60V | 5.5A | 3W |
| ZX5T951GTC | PNP | SOT-223 | 60V | 5.5A | 3W |
| LBTP660Z4TZHG | PNP | SOT-223 | 60V | 6A | 833mW |