ZX5T1951GTA Transistor Datasheet & Specifications

PNP SOT-223 High Power DIODES
VCEO
60V
Ic Max
6A
Pd Max
3W
hFE Gain
100

Quick Reference

The ZX5T1951GTA is a PNP bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 6A continuous collector current. Download the ZX5T1951GTA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic6ACollector current
Pd3WPower dissipation
DC Current Gain100hFE / Beta
Frequency120MHzTransition speed (fT)
VCEsat95mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DSS60600MZ4-13 PNP SOT-223 60V 6A 2W
NSS60600MZ4T1G PNP SOT-223 60V 6A 2W
NSV60600MZ4T3G PNP SOT-223 60V 6A 2W
LBTP660Z4TZHG PNP SOT-223 60V 6A 833mW