NSS60600MZ4T1G Transistor Datasheet & Specifications

PNP SOT-223 General Purpose onsemi
VCEO
60V
Ic Max
6A
Pd Max
2W
hFE Gain
360

Quick Reference

The NSS60600MZ4T1G is a PNP bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 6A continuous collector current. Download the NSS60600MZ4T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic6ACollector current
Pd2WPower dissipation
DC Current Gain360hFE / Beta
Frequency900kHzTransition speed (fT)
VCEsat350mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DSS60600MZ4-13 PNP SOT-223 60V 6A 2W
ZX5T1951GTA PNP SOT-223 60V 6A 3W
NSV60600MZ4T3G PNP SOT-223 60V 6A 2W
LBTP660Z4TZHG PNP SOT-223 60V 6A 833mW